Calculation and selection of silicon to glass anodic bonding modes based on the criterion of minimum residual stress

Authors: Leonid S. Sinev

arXiv: 1804.08644v1 - DOI (physics.app-ph)
Candidate of sciences (russian PhD analog) dissertation. 119 pages (excluding 7 pages of preface), 29 figures, 12 tables, 124 bibliographic references. Written in russian language (except the preface). Defended 2016-12-22 at Bauman Moscow State Technical University. This particular dissertation was minor corrected (typos, doi links) against the version that was presented at the defense procedure
License: CC BY-SA 4.0

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This dissertation focuses on the selection of efficient technological parameters for anodic bonding of silicon to glass. The aim is to minimize residual stresses and mitigate negative impacts of dissimilar materials in electronic devices. The study begins with an analysis of current research in anodic bonding technology application and emphasizes the importance of reducing residual stresses in silicon-glass bonds. Experimental investigations are conducted to determine the temperature dependence of linear thermal expansion coefficients for popular glass brands including LK5, Schott Borofloat 33, Corning 7740, and Hoya SD-2. The dissertation also proposes two novel models based on strength of materials theory and classical lamination theory with considerations for temperature-dependent coefficients of thermal expansion to estimate residual stresses in silicon-glass bonds. These models are validated through experiments and a proposed technique is tested for minimizing residual stresses in silicon anodically bonded to glass. This comprehensive work comprises 119 pages with 29 figures and 12 tables, supported by a list of 124 references. The author's personal contribution includes conducting analyses, developing mathematical models, performing experiments on temperature dependencies and spectroscopy studies, processing data, and formulating recommendations for utilizing the research findings. Overall, the results presented have significant implications for MEMS device design and simulations within electronic engineering.
AI-generated keywords: Anodic bonding Silicon-glass bonds Residual stresses Temperature dependence MEMS device design

AI-generated Key Points

  • Dissertation focuses on selection of efficient technological parameters for anodic bonding of silicon to glass
  • Aim is to minimize residual stresses and mitigate negative impacts of dissimilar materials in electronic devices
  • Analysis of current research in anodic bonding technology application highlights importance of reducing residual stresses in silicon-glass bonds
  • Experimental investigations conducted to determine temperature dependence of linear thermal expansion coefficients for popular glass brands (LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2)
  • Proposal of two novel models based on strength of materials theory and classical lamination theory with considerations for temperature-dependent coefficients of thermal expansion to estimate residual stresses in silicon-glass bonds
  • Validation of models through experiments and testing proposed technique for minimizing residual stresses in silicon anodically bonded to glass
  • Comprehensive work comprises 119 pages with 29 figures and 12 tables, supported by a list of 124 references
  • Author's personal contributions include conducting analyses, developing mathematical models, performing experiments on temperature dependencies and spectroscopy studies, processing data, and formulating recommendations for utilizing research findings
  • Results have significant implications for MEMS device design and simulations within electronic engineering
Also access our AI generated: Comprehensive summary, Lay summary, Blog-like article; or ask questions about this paper to our AI assistant.

Abstract: The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 \deg C to 500 \deg C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer.

Submitted to arXiv on 23 Apr. 2018

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