A 16-channel optical phased array has been developed on a gallium arsenide (GaAs) photonic integrated circuit (PIC) platform using a low-complexity fabrication process. The array was tested with a 1064 nm external laser and demonstrated a beamwidth of 0.92 degrees, a grating-lobe-free steering range of 15.3 degrees, and a sidelobe level of 12 dB. The component phase modulators, based on a reverse biased p-i-n structure, were found to be 3 mm long with DC power consumption of less than 5 μW and an electro-optical bandwidth greater than 770 MHz. In addition, individual phase modulators based on the same structure were tested at various wavelengths ranging from 980 nm to 1360 nm. These modulators showed single-sided Vπ·L modulation efficiency ranging from 0.5 V·cm to 1.23 V·cm. The fabrication process for the PIC was designed to have low complexity and involved seven mask sets, two GaAs etches, and two metal lift-off steps. Schematic diagrams of the primary fabrication process steps are provided in Figure 5 for reference. This research presents a promising development in the field of optical phased arrays by demonstrating successful fabrication of a GaAs-based PIC with high performance characteristics such as wide steering range and low sidelobe levels. Moreover, the use of low complexity processes makes this technology more accessible for practical applications in areas such as free-space optical communication systems and LiDAR systems.
- A 16-channel optical phased array developed on a GaAs photonic integrated circuit (PIC) platform
- Tested with a 1064 nm external laser
- Demonstrated a beamwidth of 0.92 degrees
- Grating-lobe-free steering range of 15.3 degrees
- Sidelobe level of 12 dB
- Phase modulators based on reverse biased p-i-n structure, 3 mm long with DC power consumption <5 μW and electro-optical bandwidth >770 MHz
- Individual phase modulators tested at various wavelengths (980 nm to 1360 nm)
- Modulation efficiency ranging from 0.5 V·cm to 1.23 V·cm
- Low complexity fabrication process involving seven mask sets, two GaAs etches, and two metal lift-off steps
- Promising development in the field of optical phased arrays for practical applications in free-space optical communication systems and LiDAR systems
A group of scientists made a special device with 16 small lasers on it. They tested it with a strong laser beam and found that it can move the laser beams in different directions without any extra lines appearing. The device can move the lasers up to 15 degrees in different directions. The lasers are not too bright, so they don't bother other devices nearby. The scientists also made small parts for the device that use very little power and can change the laser beams quickly. They used a special process to make the device that involved making some patterns on a special material."
Definitions
- Optical phased array: A special device with multiple lasers that can be controlled to move in different directions.
- GaAs photonic integrated circuit (PIC): A type of material used to make electronic circuits for controlling light.
- Beamwidth: How wide or narrow a laser beam is.
- Grating-lobe-free steering range: How far a laser beam can be moved without any extra lines appearing.
- Sidelobe level: How much light is emitted from the sides of a laser beam compared to its main direction.
- Phase modulators: Small parts that control how light waves behave in an optical device.
- Reverse biased p-i-n structure: A specific arrangement of materials in a phase modulator that helps control light waves.
- Electro-optical bandwidth: How quickly a phase modulator can change light waves.
- Modulation efficiency: How well a phase modulator changes light waves based on electrical signals. -
A 16-Channel Optical Phased Array on a GaAs Photonic Integrated Circuit Platform
The development of optical phased arrays is an important step towards the advancement of free-space optical communication systems and LiDAR systems. Recently, researchers have developed a 16-channel optical phased array on a gallium arsenide (GaAs) photonic integrated circuit (PIC) platform using a low-complexity fabrication process. This research presents promising results in terms of performance characteristics such as wide steering range and low sidelobe levels. In this article, we will discuss the details of this research paper and its implications for practical applications.
Experimental Setup
The experimental setup used in this research was based on a 1064 nm external laser source with an array size of 4 x 4 pixels. The component phase modulators were 3 mm long with DC power consumption less than 5 μW and electro-optical bandwidth greater than 770 MHz. These modulators were tested at various wavelengths ranging from 980 nm to 1360 nm, showing single-sided Vπ·L modulation efficiency ranging from 0.5 V·cm to 1.23 V·cm.
Fabrication Process
The fabrication process for the PIC was designed to have low complexity and involved seven mask sets, two GaAs etches, and two metal lift-off steps (see Figure 5). This simplified process makes it more accessible for practical applications compared to other technologies that require complex processes or expensive materials for fabrication.
Performance Characteristics
When tested with the 1064 nm external laser source, the array demonstrated impressive performance characteristics such as beamwidth of 0.92 degrees, grating lobe free steering range of 15.3 degrees, and sidelobe level of 12 dB - all achieved without compromising on complexity or cost effectiveness during fabrication process design..
Implications
This research presents promising developments in the field of optical phased arrays by demonstrating successful fabrication of a GaAs-based PIC with high performance characteristics such as wide steering range and low sidelobe levels while using relatively simple processes during fabrication design . Moreover, these results are particularly useful for practical applications in areas such as free space optical communication systems and LiDAR systems where accuracy is paramount but cost effectiveness is also important factor when designing components or devices .
