Control-Noise Trade-offs in Industrially Integrated ${}^{28}\mathrm{Si}/\mathrm{SiGe}$ Spin-1/2 Qubits

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1. Très proche Autre approche du problème Cité par cet article Utilisé en profondeur par cet article Pas pertinent

   Simultaneous high-fidelity single-qubit gates in a spin qubit array

   Yi-Hsien Wu, L. Camenzind, Patrick Butler et al. · 2025 · Nature Physics · cité 59 fois · Pas encore résumé

   Simultaneous high-fidelity single-qubit gates étudie les erreurs de contrôle parallèle dans un réseau de spin en silicium, tandis que cet article caractérise bruit et contrôle de dispositifs intégrés industriellement.

   Résumé scientifique

   Silicon spin qubits offer a promising path to scalable quantum computing due to their compatibility with industrial semiconductor manufacturing. A key requirement for scaling quantum processors is the ability to perform high-fidelity operations in parallel across many qubits. However, simultaneous control remains a major challenge in silicon devices, as fidelities typically degrade under parallel operation. Here we identify microwave-drive-induced a.c.-Stark shifts as the dominant source of this degradation in a five-qubit silicon spin array. We address this by introducing a scalable mitigation protocol based solely on pairwise phase calibrations. Using tailored control pulses on a shared co…

2. Très proche Base de cet article Cité par cet article Pas pertinent

   Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot.

   E. Kawakami, P. Scarlino, D. Ward et al. · 2014 · Nature Nanotechnology · cité 489 fois · Pas encore résumé

   Electrical control of a long-lived spin qubit démontre le contrôle électrique d’un spin dans Si/SiGe avec mic aimant, technologie étudiée ici dans des dispositifs industriels.

   Résumé scientifique

   Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here, we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet, and the spin state is read out in the single-shot mode. Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two…

3. Très proche Base de cet article Cité par cet article Pas pertinent

   Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

   K. Takeda, J. Yoneda, T. Otsuka et al. · 2018 · npj Quantum Information · cité 63 fois · Pas encore résumé

   Optimized electrical control of a Si/SiGe spin qubit relie le décalage de fréquence induit par micro-ondes aux erreurs de commande, également pertinentes pour les portes évaluées ici.

   Résumé scientifique

   Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing R…

4. Très proche Contexte plus large Pas pertinent

   High-fidelity single-spin shuttling in silicon

   Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver et al. · 2024 · Mesoscale and Nanoscale Physics · cité 107 fois · Résumé IA disponible

   High-fidelity single-spin shuttling étudie le transport cohérent d’électrons dans le silicium, plutôt que les compromis de bruit et de contrôle liés à la fabrication intégrée.

   Résumé scientifique

   The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si…

5. Très proche Même question Cité par cet article Pas pertinent

   Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity

   P. Steinacker, N. Dumoulin Stuyck, W. Lim et al. · 2024 · Nature · cité 141 fois · Pas encore résumé

   Industry-compatible silicon spin-qubit unit cells évalue la fidélité de qubits fabriqués en fonderie 300 mm, comme cet article, qui examine aussi l’effet de l’intégration sur leurs performances.

   Résumé scientifique

   Among the many types of qubit presently being investigated for a future quantum computer, silicon spin qubits with millions of qubits on a single chip are uniquely positioned to enable quantum computing. However, it has not been clear whether the outstanding high-fidelity operations and long coherence times shown by silicon spin qubits fabricated in academic settings1, 2, 3, 4, 5, 6, 7–8 can be reliably reproduced when the qubits are manufactured in a semiconductor foundry9, 10–11. Here we show precise qubit operation of silicon two-qubit devices made with standard semiconductor tooling in a 300-mm foundry environment. Of the key metrics, single- and two-qubit control fidelities exceed 99% f…

6. Très proche Contexte plus large Cité par cet article Pas pertinent

   Spin-qubit control with a milli-kelvin CMOS chip

   Samuel K. Bartee, W. Gilbert, K. Zuo et al. · 2025 · Nature · cité 64 fois · Pas encore résumé

   Spin-qubit control with a milli-kelvin CMOS chip examine l’intégration rapprochée de l’électronique de commande et ses effets possibles sur les qubits, dans un contexte de mise à l’échelle similaire.

   Résumé scientifique

   A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction1, 2–3. However, with each physical qubit needing multiple control lines, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware4, 5–6. A promising solution is to co-locate the control system proximal to the qubit platform at milli-kelvin temperatures, wired up by miniaturized interconnects7, 8, 9–10. Even so, heat and crosstalk from closely integrated control have the potential to degrade qubit performance, particularl…

7. Très proche Autre approche du problème Cité par cet article Pas pertinent

   Baseband control of single-electron silicon spin qubits in two dimensions

   F. K. Unseld, B. Undseth, E. Raymenants et al. · 2024 · cité 31 fois · Pas encore résumé

   Baseband control of single-electron silicon spin qubits in two dimensions explore une commande sans mic aimants pour des réseaux 2D, contrairement au contrôle EDSR et aux mic aimants étudiés ici.

   Résumé scientifique

   Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method of high-fidelity single-spin control in silicon. However, the resulting architectural limitations have restrained silicon quantum processors to one-dimensional arrays, and heating effects from the associated microwave dissipation exacerbates crosstalk during multi-qubit operations. In contrast, qubit control based on hopping spins has recently emerged as a compelling primitive for high-fidelity baseband control in sparse two-dimensional hole arrays in germanium. In this work, we commission a $^{28}$Si/SiGe 2x2 quantum dot array both as a four-qubit device with pairwise exchange interactions using established E…

8. Très proche Même question Cité par cet article Utilisé en profondeur par cet article Pas pertinent

   Scaling of silicon spin qubits under correlated noise

   J. S. Rojas-Arias, L. Camenzind, Yi-Hsien Wu et al. · 2026 · cité 6 fois · Pas encore résumé

   Scaling of silicon spin qubits under correlated noise quantifie les corrélations de bruit dans un réseau de silicium, caractéristique également mesurée dans les dispositifs intégrés ici.

   Résumé scientifique

   The path to fault-tolerant quantum computing hinges on hardware that scales while remaining compatible with quantum error correction (QEC). Silicon spin qubits are a leading hardware candidate because they combine industrial fabrication compatibility with a nanoscale footprint that could accommodate millions of qubits on a chip. However, their suitability for QEC remains uncertain since spatially correlated noise naturally emerges from the resulting close proximity of qubits. These correlations increase the likelihood of simultaneous errors and erode the redundancy that QEC depends on. Here we quantify the spatial extent of noise correlations in a five-qubit silicon array and assess their im…

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1. Proche Même question Utilisé en profondeur par cet article Pas pertinent

   Noise-correlation spectrum for a pair of spin qubits in silicon

   J. Yoneda, J. S. Rojas-Arias, P. Stano et al. · 2022 · Nature Physics · cité 94 fois · Pas encore résumé

   Noise-correlation spectrum for a pair of spin qubits in silicon mesure les corrélations de bruit entre qubits voisins, comme l’analyse de bruit menée dans cette étude.

   Résumé scientifique

   Semiconductor qubits have a small footprint and so are appealing for building densely integrated quantum processors. However, fabricating them at high densities raises the issue of noise correlated across different qubits, which is of practical concern for scalability and fault tolerance. Here, we analyse and quantify the degree of noise correlation in a pair of neighbouring silicon spin qubits around 100 nm apart. We observe strong interqubit noise correlations with a correlation strength as large as 0.7 at around 1 Hz, even in the regime where the spin–spin exchange interaction contributes negligibly. We find that fluctuations of single-spin precession rates are strongly correlated with ex…

2. Proche Base de cet article Pas pertinent

   Qubits made by advanced semiconductor manufacturing

   A. Zwerver, T. Krähenmann, T. Watson et al. · 2021 · Nature Electronics · cité 390 fois · Pas encore résumé

   Qubits made by advanced semiconductor manufacturing démontre la fabrication de points quantiques dans une usine 300 mm, contexte industriel repris ici pour étudier le contrôle des spins.

   Résumé scientifique

   Silicon spin qubits can be fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a ^28Si/^28SiO_2 interface and fabricated in a 300 mm semiconductor manufacturing facility usi…

3. Proche Même méthode, autre problème Pas pertinent

   High-fidelity spin qubit operation and algorithmic initialization above 1 K

   J. Y. Huang, R.-Y. Su, W. Lim et al. · 2023 · Nature · cité 162 fois · Pas encore résumé

   High-fidelity spin qubit operation and algorithmic initialization above 1 K caractérise le fonctionnement et la fidélité de qubits de spin en silicium, comme cet article, mais à température supérieure à 1 K.

   Résumé scientifique

   The encoding of qubits in semiconductor spin carriers has been recognized as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale1–10. However, the operation of the large number of qubits required for advantageous quantum applications11–13 will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 K, at which the cooling power is orders of magnitude higher14–18. Here we tune up and operate spin qubits in silicon above 1 K, with fidelities in the range required for fault-tolerant operati…

4. Proche Même méthode, autre problème Pas pertinent

   A fault-tolerant addressable spin qubit in a natural silicon quantum dot

   K. Takeda, J. Kamioka, T. Otsuka et al. · 2016 · Science Advances · cité 232 fois · Pas encore résumé

   A fault-tolerant addressable spin qubit in a natural silicon quantum dot évalue la fidélité et l’adressabilité d’un spin dans le silicium, tandis que cet article mesure les performances de qubits isotopiquement purifiés.

   Résumé scientifique

   This is the first experimental demonstration of a fault-tolerant spin qubit in industry-compatible isotopically natural silicon. Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified sil…

5. Proche Base de cet article Pas pertinent

   Robust micromagnet design for fast electrical manipulations of single spins in quantum dots

   J. Yoneda, T. Otsuka, T. Takakura et al. · 2015 · Applied Physics Express · cité 71 fois · Pas encore résumé

   Robust micromagnet design for fast electrical manipulations of single spins in quantum dots étudie les gradients de champ nécessaires au contrôle électrique, au cœur du compromis analysé ici.

   Résumé scientifique

   Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50 MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids.…