Résumé : Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of {\Omega} {\mu}m up to a few k{\Omega} {\mu}m. Manufacturable solutions for defining ohmic contacts to graphene remain a subject of research. Here, we report a scalable method based on laser irradiation of graphene to reduce the R{_C} in nickel-contacted devices. A laser with a wavelength of {\lambda} = 532 nm is used to induce defects at the contact regions, which are monitored \textit{in-situ} using micro-Raman spectroscopy. Physical damage is observed using \textit{ex-situ} atomic force and scanning electron microscopy. The transfer line method (TLM) is used to extract R{_C} from back-gated graphene devices with and without laser treatment under ambient and vacuum conditions. A significant reduction in R{_C} is observed in devices where the contacts are laser irradiated, which scales with the laser power. The lowest R{_C} of about 250 {\Omega} {\mu}m is obtained for the devices irradiated with a laser power of 20 mW, compared to 900 {\Omega} {\mu}m for the untreated devices. The reduction is attributed to an increase in defect density, which leads to the formation of crystallite edges and in-plane dangling bonds that enhance the injection of charge carriers from the metal into the graphene. Our work suggests laser irradiation as a scalable technology for R{_C} reduction in graphene and potentially other two-dimensional materials.