Search Results for « Rashba spin-orbit interaction »

The spin polarization of current in a conventional ferromagnetic and semiconductor-based Rashba spin–orbit interaction (RSOI) in an infinite two-dimensional system and the electrical properties of the junction are described using the square lattice model. In particular, a suitable approach is devised to compute the particle transport characteristics in the junction, taking into consideration the interface quality. It is found that the spin polarization becomes strongly reliant on the spin-flip scattering potential at applied voltages close to the crossings of the semiconductor-based RSOI band. On the other hand, in the voltage near the middle band, the spin polarization of current is found to remain modest and not influenced by either the spin-flip or non-spin-flip scattering potentials.

Abstract Spin current is a central theme in spintronics, and its generation is a keen issue. The spin-polarized current injection from the ferromagnet, spin battery, and spin Hall effect have been used to generate spin current, but Ohmic currents in the normal state are involved in all of these methods. On the other hand, the spin and spin current manipulation by the supercurrent in superconductors is a promising route for dissipationless spintronics. Here we show theoretically that, in two-dimensional superconductors with Rashba spin-orbit interaction, the generation of dissipationless bulk spin current by charge supercurrent becomes highly efficient, exceeding that in normal states in the dilute limit, i.e. when the chemical potential is close to the band edge, although the spin density becomes small there. This result manifests the possibility of creating new spintronic devices with long-range coherence.