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The Effect of Both Abrupt and Strong Enhancement of Current in the Semiconductor System: Schottky Barrier Containing a Double Barrier Resonant-Tunneling Structure
A. M. Korol (Taras Shevchenko National University of Kyiv), Oleg V. Tretyak (Taras Shevchenko National University of Kyiv), Д. И. Шека (Taras Shevchenko National University of Kyiv)
Abstract: The current–voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. It is demonstrated that the Schottky barrier can block or unblock (depending on the parameters of the problem involved) the resonant-tunneling current effectively. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.