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Intrinsic quantum anomalous Hall effect in two-dimensional Zr2O6

Yang Li (Tianjin University, Chongqing Youth Vocational & Technical College)

Frontiers in Physics
DOI: 10.3389/fphy.2026.1847362 (Physics and Astronomy)
License: CC BY

Abstract: Spin-gapless semiconductors (SGSs) have become an important topic in spintronics because they combine zero-gap electronic features with complete spin polarization, offering opportunities for low-dissipation transport and high-efficiency spin manipulation. This makes them natural candidates for hosting topological states such as the quantum anomalous Hall (QAH) phase. In this work, we show that honeycomb monolayer Zr 2 O 6 belongs to a ferromagnetic QAH insulator. Without spin–orbit coupling, Zr 2 O 6 shows linear band crossings (BCs) near the Fermi level (E F ) only in the spin-down sector, whereas the spin-up sector remains gapped, giving rise to SGS nature. SOC then opens a gap for the bands of spin-up sector, and drives the system into a insulating state with C = −1, making Zr 2 O 6 a good candidate for investigating the QAH physics.

Published on 26 May. 2026