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Abstract: Emerging photonic quantum technologies require the development of high-performance sources of quantum light. Among different platforms, self-assembled GaAs quantum dots (QDs) in AlGaAs have demonstrated excellent performance both as quantum emitters as well as hosts of electron and nuclear spins with long coherence times. The most established method to produce GaAs QDs relies on the Al-droplet etching epitaxy. Under optimized conditions, the QDs have high in-plane symmetry, good ensemble homogeneity, high oscillator strengths, and high optical quality, especially when embedded in charge-tunable diode structures. These properties make them particularly suited for the generation of polarization-entangled photon pairs using the biexciton-exciton cascade. To make sure the QDs fulfill simultaneously criteria of maximal brightness, desired emission wavelength and charge state, it is necessary to integrate them in photonic devices, which ideally should display a high degree of tunability. In this talk, we will provide an overview on the properties of GaAs QDs and discuss strain- and electrically-tunable quantum optoelectronic devices with deterministically embedded QDs.