Running summarizing tools on a new article
Check the paper below, then start its synthesis.
On the mathematical modeling of memristors
Ahmed Gomaa Radwan (Cairo University, King Abdullah University of Science and Technology), Mohammed Affan Zidan (King Abdullah University of Science and Technology), Khaled Nabil Salama (King Abdullah University of Science and Technology)
Abstract: Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.