Running summarizing tools on a new article
Check the paper below, then start its synthesis.
Observation of a hole-side v = 7/2 fractional quantum hall state in trilayer graphene
Boyuan Wei (Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures), Fengyi Guo (Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures), Anonymous (Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures), Xicheng Zhang (Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures), Zhe Ying, Chuanying Xi (High Magnetic Field Laboratory), Fengqi Song (Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures)
Abstract: The intertwined many-body correlation, nontrivial topology, and symmetry can lead to exotic low-energy quasiparticle excitation, such as fractional quantum Hall (FQH) states, Fermi liquids, etc. Some FQH states with even denominators appearing at the half-filling of Landau levels can be interpreted by Moore-Read theory, and the corresponding composite fermions satisfy non-Abelian statistics and have the potential to realize topological quantum computation. Possessing extraordinary tunability that stems from the intricate interplay of spin, valley, and orbital degrees of freedom, few-layer graphene stands out as an ideal platform for studying the FQH effect. Here we report the observation of theFQH state on the hole side of Bernal-stacked trilayer graphene unilaterally encapsulated with hexagonal boron nitride-the first realization of this state on the hole side of pristine trilayer graphene. In contrast to recently reported electron-side even-denominator states hosted in the monolayer-likeorbital, thestate emerges in the bilayer-likeorbital near its crossing with thelevel, and exhibits a transport activation gap ofK, nearly two orders of magnitude larger than its electron-side counterparts. This value, obtained from Arrhenius analysis of the temperature-dependent residual resistance, is a conservative lower bound, as the analysis is limited by the residual-resistance floor. Our results suggest that few-layer graphene is an ideal platform for studying low-dimensional correlation states.