Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays
AI-generated Key Points
- Researchers explore potential of semiconductor quantum dot arrays for spin-based error-corrected quantum computation
- Challenge of achieving single-spin occupancy in each dot within a growing array due to complexity and limited sensitivity of charge sensors
- Proposed novel approach to address the issue and scale up a spin-based architecture
- Demonstrated single-spin occupancy in foundry-fabricated array by combining two key methods:
- Loading finite number of electrons into the quantum dot array while isolating it from reservoirs for enhanced control over individual charges
- Deploying multiplex gate-based reflectometry to probe charge tunneling and spin states without traditional charge sensors or reservoirs
- Successful achievement of single-spin occupancy in each dot of isolated arrays
- Isolated arrays can be electrostatically tuned and offer scalable solution for spin-based quantum architectures
- Study opens up possibilities for building larger qubit arrays and designing advanced spin-based quantum systems with enhanced efficiency and performance
Authors: Pierre Hamonic, Martin Nurizzo, Jayshankar Nath, Matthieu C. Dartiailh, Victor El-Homsy, Mathis Fragnol, Biel Martinez, Pierre-Louis Julliard, Bruna Cardoso Paz, Mathilde Ouvrier-Buffet, Jean-Baptiste Filippini, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta
Abstract: Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures.
Ask questions about this paper to our AI assistant
You can also chat with multiple papers at once here.
Assess the quality of the AI-generated content by voting
Score: -1
Why do we need votes?
Votes are used to determine whether we need to re-run our summarizing tools. If the count reaches -10, our tools can be restarted.
Similar papers summarized with our AI tools
Navigate through even more similar papers through a
tree representationLook for similar papers (in beta version)
By clicking on the button above, our algorithm will scan all papers in our database to find the closest based on the contents of the full papers and not just on metadata. Please note that it only works for papers that we have generated summaries for and you can rerun it from time to time to get a more accurate result while our database grows.
Disclaimer: The AI-based summarization tool and virtual assistant provided on this website may not always provide accurate and complete summaries or responses. We encourage you to carefully review and evaluate the generated content to ensure its quality and relevance to your needs.