High-fidelity single-spin shuttling in silicon

AI-generated keywords: quantum computing single-spin shuttling electron transport qubit-qubit interactions spin coherence

AI-generated Key Points

  • Study titled "High-fidelity single-spin shuttling in silicon" advances quantum computing by transporting electron within Si/SiGe heterostructure using electric gate potentials
  • Connectivity between qubits crucial for computational power and fault-tolerance of large-scale quantum processors
  • Methods to enhance connectivity include engineering qubit-qubit interactions or physically displacing the qubits
  • Study involved creating static quantum dots and investigating spin coherence decay when moving a single electron between up to five dots
  • Traveling wave potential developed for transporting electron in moving quantum dot showed better spin coherence compared to static dots
  • Advancement allows displacement of electron over 10 μm in under 200 ns with average fidelity of 99%
  • Results guide future efforts towards large-scale semiconductor quantum processors utilizing electron shuttling within and between qubit arrays
  • Viability demonstrated for high-fidelity quantum interconnects between local and distant spin qubits, providing direction for further research and development
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Authors: Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Nodar Samkharadze, Önder Gül, Rick N. M. Wasserman, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen

arXiv: 2406.07267v1 - DOI (cond-mat.mes-hall)
15 pages, 15 figures
License: CC BY 4.0

Abstract: The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 {\mu}m in under 200 ns with an average fidelity of 99%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.

Submitted to arXiv on 11 Jun. 2024

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Results of the summarizing process for the arXiv paper: 2406.07267v1

A recent study titled "High-fidelity single-spin shuttling in silicon" has made significant progress in the field of quantum computing by successfully transporting an electron within an isotopically purified Si/SiGe heterostructure using electric gate potentials. The connectivity between qubits is crucial for the computational power and fault-tolerance of future large-scale quantum processors. One way to enhance this connectivity is through engineering qubit-qubit interactions or physically displacing the qubits. This study involved creating static quantum dots and investigating spin coherence decay when moving a single electron between up to five dots. Additionally, a traveling wave potential was developed to transport an electron in a moving quantum dot, which showed significantly better spin coherence compared to the first method. This advancement allowed for the displacement of an electron over an effective distance of 10 μm in under 200 ns with an average fidelity of 99%. These results are crucial for guiding future efforts towards realizing large-scale semiconductor quantum processors that utilize electron shuttling within and between qubit arrays. The study demonstrates the viability of high-fidelity quantum interconnects between both local and distant spin qubits, providing valuable direction for further research and development in the field of quantum computing.
Created on 03 Sep. 2024

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