Quantum capacitance of a superconducting subgap state in an electrostatically floating dot-island
AI-generated Key Points
- Hybrid device: InAs nanowire with epitaxial Al shell containing a quantum dot in contact with a superconducting island
- Device designed to be electrically floating, allowing access to highly excited and unstable states
- Researchers use radio-frequency reflectometry with lumped-element resonators to investigate the properties of the system
- Specifically examine quantum-dot-induced subgap states controlled by tunnel coupling
- Thermal excitations strongly suppress capacitance loading the resonator, known as "thermal screening"
- Single-level Anderson impurity model successfully explains observed resonance frequency shifts and changes in quality factor during charge transitions
- Measurement method and analysis framework can be applied to more complex hybrid devices
- Provides insights into behavior of superconducting subgap states in electrostatically floating dot-island systems
Authors: Filip K. Malinowski, R. K. Rupesh, Luka Pavešić, Zoltán Guba, Damaz de Jong, Lin Han, Christian G. Prosko, Michael Chan, Yu Liu, Peter Krogstrup, András Pályi, Rok Žitko, Jonne V. Koski
Abstract: We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing access to states that would otherwise be highly excited and unstable. Radio-frequency reflectometry with lumped-element resonators couples capacitatively to the quantum dot, and detects the presence of discrete subgap states. We perform a detailed study of the case with no island states, but with quantum-dot-induced subgap states controlled by the tunnel coupling. When the gap to the quasi-continuum of the excited states is small, the capacitance loading the resonator is strongly suppressed by thermal excitations, an effect we dub "thermal screening". The resonance frequency shift and changes in the quality factor at charge transitions can be accounted for using a single-level Anderson impurity model. The established measurement method, as well as the analysis and simulation framework, are applicable to more complex hybrid devices such as Andreev molecules or Kitaev chains.
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