Double-dot charge transport in Si single electron/hole transistors
AI-generated Key Points
⚠The license of the paper does not allow us to build upon its content and the key points are generated using the paper metadata rather than the full article.
- Ultra-small Si quantum dot transistors were investigated
- Behavior of the devices varied depending on temperature range
- At high temperatures (4K-100K), single-electron or single-hole transport through lithographically defined dots was observed
- At temperatures below 4K, multidot transport was observed, indicating the presence of multiple dots involved in the process
- Samples with double-dot characteristics were analyzed to further understand this behavior
- Extra dots were found within the thermally grown gate oxide surrounding the lithographically defined dot
- This suggests that additional quantum dots can be created within the device structure itself
- The study provides valuable insights into Si quantum dot transistor transport properties
- Temperature effects and additional dots should be considered when understanding their behavior.
Authors: L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui
Abstract: We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.
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