Results of the summarizing process for the arXiv paper: 2308.11931v1

This study focuses on the defect-induced doping characteristics of monolayer PbSe, a predicted two-dimensional (2D) topological crystalline insulator (TCI). The researchers conduct experimental and theoretical investigations to understand the p-type characteristic induced by defects in epitaxial monolayer PbSe on Au(111). They begin by using scanning tunneling microscopy (STM) measurements to confirm the presence of an epitaxial PbSe monolayer with a fourfold symmetric lattice. Then, they combine scanning tunneling spectroscopy (STS) measurements with density functional theory (DFT) calculations to determine the quasi-particle bandgap of PbSe, which is found to be 0.8eV. The STM results reveal two types of surface defects: vacancies of Pb atoms and replacement of absent Se atoms by Pb. The structures of these defects are confirmed through theoretical optimization. Importantly, both STS measurements and DFT calculations provide evidence that the Pb vacancies move the Fermi energy inside the valence band and generate extra holes, resulting in p-type characteristics for PbSe. This research provides valuable insights into the defect-induced doping behavior of monolayer PbSe on Au(111), contributing to future research on device performance based on PbSe films and harnessing its thermoelectric and infrared optical properties.

• - Study focuses on defect-induced doping characteristics of monolayer PbSe
• - Experimental and theoretical investigations conducted
• - Scanning tunneling microscopy (STM) used to confirm presence of epitaxial PbSe monolayer
• - Scanning tunneling spectroscopy (STS) and density functional theory (DFT) used to determine quasi-particle bandgap of PbSe (0.8eV)
• - Two types of surface defects observed: vacancies of Pb atoms and replacement of absent Se atoms by Pb
• - Structures of defects confirmed through theoretical optimization
• - Pb vacancies move Fermi energy inside valence band and generate extra holes, resulting in p-type characteristics for PbSe
• - Research provides insights into defect-induced doping behavior for future device performance based on PbSe films

Researchers conducted a study to understand how defects affect a material called monolayer PbSe. They used special tools like scanning tunneling microscopy (STM) to see the PbSe layer and scanning tunneling spectroscopy (STS) and density functional theory (DFT) to measure its properties. They found two types of defects: missing Pb atoms and replaced Se atoms. These defects change the behavior of PbSe, making it p-type, which means it has extra holes. This research helps us understand how defects can affect devices made with PbSe in the future." Definitions- Defects: Flaws or imperfections in a material. - Monolayer: A very thin layer of a substance. - Epitaxial: When one material is grown on top of another material in an ordered way. - Quasi-particle bandgap: The energy difference between different states in a material. - Vacancies: Empty spaces where atoms should be. - Fermi energy: The highest energy level that electrons can have at absolute zero temperature. - Valence band: The range of energy levels that electrons can occupy in a solid material. - P-type characteristics: When a material has extra positive charges called holes.

Introduction: Monolayer PbSe, a two-dimensional (2D) topological crystalline insulator (TCI), has been predicted to have unique electronic and optical properties. However, its potential for practical applications has been hindered by the difficulty in achieving controllable doping. In this study, researchers investigate the defect-induced doping characteristics of monolayer PbSe on Au(111) through experimental and theoretical investigations. Experimental Methods: The researchers begin by using scanning tunneling microscopy (STM) measurements to confirm the presence of an epitaxial PbSe monolayer with a fourfold symmetric lattice on Au(111). This is achieved by depositing lead and selenium atoms onto a clean Au(111) surface at room temperature. The STM images show clear atomic resolution of the monolayer structure, confirming its high quality. Next, they use scanning tunneling spectroscopy (STS) measurements to determine the quasi-particle bandgap of PbSe. This is done by measuring the energy gap between occupied and unoccupied states using a bias voltage applied to the STM tip. The STS results reveal a bandgap of 0.8eV for monolayer PbSe on Au(111). Theoretical Calculations: To further understand the electronic properties of monolayer PbSe on Au(111), density functional theory (DFT) calculations are performed. These calculations provide valuable insights into the electronic structure and defect-induced doping behavior of this material. Defects in Monolayer PbSe: The STM results also reveal two types of surface defects: vacancies of Pb atoms and replacement of absent Se atoms by Pb. To confirm these structures, theoretical optimization is carried out using DFT calculations which match well with experimental observations. Pb Vacancies Inducing P-type Characteristics: Importantly, both STS measurements and DFT calculations provide evidence that the presence of Pb vacancies induces p-type characteristics in monolayer PbSe on Au(111). This is due to the movement of the Fermi energy inside the valence band and generation of extra holes by the vacancies. These results provide valuable insights into the defect-induced doping behavior of monolayer PbSe, which can be utilized in future research for device performance based on PbSe films. Conclusion: In conclusion, this study provides a detailed understanding of the defect-induced doping characteristics of monolayer PbSe on Au(111). The combination of experimental and theoretical investigations has revealed important insights into the electronic properties and defect structures of this material. This research contributes to further exploration and utilization of monolayer PbSe for its unique thermoelectric and infrared optical properties.