This study investigates the growth and interface structure of single crystalline tungsten (W) thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). Despite a significant lattice mismatch between W and the substrates, enhanced crystal quality is observed for W grown on sapphire substrates. This is attributed to stronger adhesion and chemical bonding with sapphire compared to magnesium oxide, along with restructuring of the W layers near the interface. The findings are supported by ab initio calculations using density functional theory. Additionally, the study demonstrates the growth of magnetic heterostructures consisting of high-quality W layers combined with ferromagnetic CoFe layers, which have potential applications in spintronics. The epitaxial growth of W thin films was analyzed using extensive x-ray scattering techniques, including reflectometry (XRR) and diffraction (XRD). XRR measurements were performed using a Bede D1 diffractometer equipped with a Cu Kα1 x-ray source. The data obtained from XRR analysis allowed for the determination of the scattering length density profile, providing information on layer thickness and roughness. XRD measurements involved coupled 2θ-θ and rocking curve scans to analyze peak positions and texture analysis through rotational ϕ scans at different sample tilts χ. In addition to x-ray scattering analysis, scanning transmission electron microscopy (STEM) imaging was conducted to confirm the epitaxial growth. The high-resolution STEM images provided detailed insights into the growth mechanism of these epitaxial thin films. The study also investigated the electrical properties of the W thin films. Hall coefficient and resistivity measurements were carried out using a 4-point probe setup in a van der Pauw geometry. The results contribute to an understanding of how high crystal quality can be achieved in spite of lattice mismatch between substrate and film. This understanding is crucial for the development of future spintronic applications that may require bilayers of W and CoFe. The research was supported by funding from the Swedish Research Council, the Swedish Energy Agency, and the Olle Engkvist Foundation. The computations were enabled by resources provided by the National Academic Infrastructure for Supercomputing in Sweden (NAISS) at National Supercomputer Centre (NSC). The data supporting the findings of this study are available from the authors upon reasonable request. In summary, this study provides valuable insights into the growth and interface structure of W thin films on metal oxide substrates. It highlights the importance of adhesion, chemical bonding, and restructuring near the interface in achieving high crystal quality. The findings have implications for spintronic applications involving W-CoFe heterostructures.
- - Single crystalline tungsten (W) thin films grown on Al$_{2}$O$_{3}$ ($11\bar{2}0$) substrates exhibit enhanced crystal quality compared to those grown on MgO ($001$) substrates
- - The stronger adhesion and chemical bonding with sapphire contribute to the improved crystal quality of W on Al$_{2}$O$_{3}$
- - Restructuring of the W layers near the interface also plays a role in achieving high crystal quality
- - Ab initio calculations using density functional theory support the findings
- - Magnetic heterostructures consisting of high-quality W layers combined with ferromagnetic CoFe layers are demonstrated, which have potential applications in spintronics
- - X-ray scattering techniques, including reflectometry (XRR) and diffraction (XRD), were used to analyze the epitaxial growth of W thin films
- - Scanning transmission electron microscopy (STEM) imaging confirmed the epitaxial growth mechanism
- - Electrical properties of the W thin films were investigated through Hall coefficient and resistivity measurements
- - Understanding how high crystal quality can be achieved despite lattice mismatch between substrate and film is crucial for future spintronic applications involving W-CoFe bilayers
- - The research was supported by funding from various sources, including the Swedish Research Council and the Olle Engkvist Foundation
- Single crystalline: This means that the tungsten thin films are made up of only one crystal structure, which makes them stronger and more organized.
- Crystal quality: This refers to how well the crystals in the tungsten thin films are formed. Higher crystal quality means that the crystals are more perfect and aligned.
- Adhesion: This is how well two materials stick together. In this case, it refers to how well the tungsten thin films stick to the sapphire substrate.
- Chemical bonding: This is when atoms from different materials join together through chemical reactions. In this case, it refers to how the tungsten thin films and sapphire substrate bond together.
- Epitaxial growth: This is a process where a new layer of material grows on top of another material in a way that matches its crystal structure. In this case, it refers to how the tungsten thin films grow on the substrate in an organized way.
Introduction
The field of spintronics, which involves the manipulation of electron spin for information storage and processing, has gained significant attention in recent years due to its potential for faster and more efficient devices. One key component in spintronic devices is the interface between different materials, as it plays a crucial role in determining their properties. In this regard, understanding the growth and interface structure of thin films is essential for developing high-quality heterostructures with desired functionalities.
This research paper investigates the growth and interface structure of single crystalline tungsten (W) thin films on two metal oxide substrates: Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). These substrates were chosen due to their different lattice constants compared to W, resulting in a significant lattice mismatch. Despite this mismatch, enhanced crystal quality was observed for W grown on sapphire (Al$_{2}$O$_{3}$) substrates compared to magnesium oxide (MgO).
Growth Mechanism
The study suggests that the improved crystal quality can be attributed to stronger adhesion and chemical bonding between W and sapphire compared to MgO. This finding is supported by ab initio calculations using density functional theory. The calculations showed that W atoms have a higher binding energy with oxygen atoms from sapphire than those from MgO.
Furthermore, the study also revealed restructuring of the W layers near the interface when grown on sapphire substrates. This restructuring leads to a better match between the lattice constants of W and Al$_{2}$O$_{3}$. On the other hand, no such restructuring was observed for W grown on MgO.
X-ray Scattering Techniques
To analyze the epitaxial growth of W thin films on these substrates, extensive x-ray scattering techniques were used, including reflectometry (XRR) and diffraction (XRD). XRR measurements were performed using a Bede D1 diffractometer equipped with a Cu Kα1 x-ray source. The data obtained from XRR analysis allowed for the determination of the scattering length density profile, providing information on layer thickness and roughness.
XRD measurements involved coupled 2θ-θ and rocking curve scans to analyze peak positions and texture analysis through rotational ϕ scans at different sample tilts χ. These techniques provided valuable insights into the crystal structure and orientation of the W thin films on both substrates.
Scanning Transmission Electron Microscopy
In addition to x-ray scattering techniques, scanning transmission electron microscopy (STEM) imaging was conducted to confirm the epitaxial growth of W thin films on sapphire substrates. The high-resolution STEM images provided detailed insights into the growth mechanism of these epitaxial thin films.
Electrical Properties
The study also investigated the electrical properties of W thin films by measuring their Hall coefficient and resistivity using a 4-point probe setup in a van der Pauw geometry. The results showed that W grown on sapphire had lower resistivity compared to those grown on MgO, further supporting its higher crystal quality.
Implications for Spintronics Applications
The findings of this study have important implications for spintronic applications involving bilayers of W and ferromagnetic CoFe layers. By understanding how high crystal quality can be achieved despite lattice mismatch between substrate and film, researchers can develop more efficient heterostructures with desired functionalities.
Funding Sources
This research was supported by funding from the Swedish Research Council, the Swedish Energy Agency, and the Olle Engkvist Foundation. Additionally, computational resources were provided by National Academic Infrastructure for Supercomputing in Sweden (NAISS) at National Supercomputer Centre (NSC).
Conclusion
In conclusion, this study provides valuable insights into the growth and interface structure of W thin films on metal oxide substrates. It highlights the importance of adhesion, chemical bonding, and restructuring near the interface in achieving high crystal quality. The findings have implications for spintronic applications involving W-CoFe heterostructures. The data supporting the findings of this study are available from the authors upon reasonable request.