Results of the summarizing process for the arXiv paper: 1701.07758v1

The contact resistance in electronic devices based on two-dimensional layered (2D) semiconductors is a significant performance bottleneck. Unlike traditional devices, these semiconductors have Schottky contacts instead of Ohmic contacts. While it is widely accepted that the injection mechanism changes from thermionic to tunneling with gate biasing, existing models oversimplify the transport problem by neglecting the 2D transport nature and the modulation of the Schottky barrier height, especially in back-gated devices. To address this issue, a team of researchers led by Roberto Grassi developed a semi-analytical model based on Bardeen's transfer Hamiltonian approach. This model takes into account both the 2D transport nature and the modulation of the Schottky barrier height. Surprisingly, their model successfully reproduces several experimental observations of a metallic behavior in the contact resistance. One key finding is that the contact resistance exhibits a decreasing trend with decreasing temperature at high gate voltage. This observation suggests that there are unique electronic properties at play in these 2D semiconductors which can be harnessed for improved device performance. Overall, this study provides valuable insights into understanding and optimizing contact resistance in electronic devices based on 2D semiconductors. The developed semi-analytical model offers a more accurate description of the transport problem and can guide future research efforts towards overcoming this performance bottleneck.

• - Contact resistance in electronic devices based on 2D semiconductors is a significant performance bottleneck
• - These semiconductors have Schottky contacts instead of Ohmic contacts
• - Existing models oversimplify the transport problem by neglecting the 2D transport nature and modulation of the Schottky barrier height
• - A semi-analytical model based on Bardeen's transfer Hamiltonian approach was developed to address this issue
• - The model successfully reproduces experimental observations of metallic behavior in contact resistance
• - Contact resistance exhibits a decreasing trend with decreasing temperature at high gate voltage
• - Unique electronic properties in 2D semiconductors can be harnessed for improved device performance
• - The study provides valuable insights into understanding and optimizing contact resistance in electronic devices based on 2D semiconductors
• - The developed semi-analytical model offers a more accurate description of the transport problem and can guide future research efforts.

Summary- Contact resistance is a problem in electronic devices made with 2D semiconductors. - These semiconductors use Schottky contacts instead of Ohmic contacts. - Current models don't fully understand how the electrons move in these materials and how the Schottky barrier affects them. - Scientists made a new model to study this problem, and it matched what they saw in experiments. - By using this model, we can learn more about contact resistance and make better electronic devices. Definitions- Contact resistance: The difficulty for electricity to flow through the connection between two parts of an electronic device. - 2D semiconductors: Materials that are very thin and can conduct electricity under certain conditions. - Schottky contacts: A type of connection between two materials that allows electricity to flow in one direction but not the other. - Ohmic contacts: A type of connection between two materials that allows electricity to flow freely in both directions. - Transport problem: The challenge of understanding how electrons move through a material.

Exploring Contact Resistance in 2D Semiconductors

The contact resistance in electronic devices based on two-dimensional (2D) semiconductors is a significant performance bottleneck. Unlike traditional devices, these semiconductors have Schottky contacts instead of Ohmic contacts. To address this issue, a team of researchers led by Roberto Grassi developed a semi-analytical model based on Bardeen's transfer Hamiltonian approach to better understand and optimize the contact resistance. This study provides valuable insights into understanding and optimizing contact resistance in electronic devices based on 2D semiconductors.

Understanding the Transport Problem

It is widely accepted that the injection mechanism changes from thermionic to tunneling with gate biasing. However, existing models oversimplify the transport problem by neglecting the 2D transport nature and the modulation of the Schottky barrier height, especially in back-gated devices. The newly developed semi-analytical model takes into account both these factors for improved accuracy in describing the transport problem.

Surprising Findings

Surprisingly, their model successfully reproduces several experimental observations of a metallic behavior in the contact resistance. One key finding is that at high gate voltage, there was a decreasing trend with decreasing temperature observed for contact resistance which suggests that there are unique electronic properties at play here which can be harnessed for improved device performance.

Conclusion

Overall, this research paper offers valuable insights into understanding and optimizing contact resistance in electronic devices based on 2D semiconductors through its semi-analytical model which takes into account both 2D transport nature and modulation of Schottky barrier height for improved accuracy compared to existing models. Moreover, it also reveals some surprising findings such as an observed decreasing trend with decreasing temperature at high gate voltage which suggests that there are unique electronic properties at play here which can be further explored for improved device performance