Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

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Authors: Min Ju Yun, Sungho Kim, Hee-Dong Kim

arXiv: 1605.06014v1 - DOI (cond-mat.mtrl-sci)

Abstract: The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, the stable RS performance was observed under 40 repetitive dc cycling test with the small variations of set/reset voltages and currents, and good retention characteristics over 105 s in both LRS and HRS. These results show the possibility of MOCVD grown HfO2 films as a promising resistive switching materials for ReRAM applications.

Submitted to arXiv on 19 May. 2016

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Created on 04 Apr. 2023
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