Results of the summarizing process for the arXiv paper: 1405.0129v1

Two-dimensional semiconductors, such as MoS2, have shown great potential for various applications in electronics, optoelectronics and energy harvesting. However, large-area growth methods are required to enable their practical use. Although significant progress has been made towards this goal, controlling the lattice orientation during growth remains a challenge. Grain boundaries can form during growth and negatively impact the electrical, optical and mechanical properties of MoS2 and other 2D semiconductors. In this study, the authors report on the uniform growth of high-quality centimeter-scale continuous monolayer MoS2 with control over lattice orientation. Using transmission electron microscopy, they show that the monolayer film is composed of coalescing single islands that share a predominant lattice orientation due to an epitaxial growth mechanism. Raman and photoluminescence spectra confirm the high quality of the grown material. Optical absorbance spectra acquired over large areas show new features in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. The interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment; however, it is still possible to transfer the grown material easily and fabricate field-effect transistors on SiO2 substrates showing mobility superior to exfoliated material. The authors suggest that their findings could pave the way for further research into large-scale production techniques for 2D materials with controlled crystallographic orientations. Overall, this study provides important insights into how to grow high-quality 2D materials with controlled crystallographic orientations at a large scale which could have significant implications for future research in electronics, optoelectronics and energy harvesting fields using these materials.

• - Two-dimensional semiconductors like MoS2 have potential for various applications in electronics, optoelectronics and energy harvesting.
• - Large-area growth methods are required to enable their practical use.
• - Controlling the lattice orientation during growth remains a challenge.
• - Grain boundaries can form during growth and negatively impact the electrical, optical and mechanical properties of MoS2 and other 2D semiconductors.
• - The authors report on the uniform growth of high-quality centimeter-scale continuous monolayer MoS2 with control over lattice orientation using an epitaxial growth mechanism.
• - Raman and photoluminescence spectra confirm the high quality of the grown material.
• - Optical absorbance spectra acquired over large areas show new features in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors.
• - The interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment; however, it is still possible to transfer the grown material easily and fabricate field-effect transistors on SiO2 substrates showing mobility superior to exfoliated material.
• - The authors suggest that their findings could pave the way for further research into large-scale production techniques for 2D materials with controlled crystallographic orientations.

Scientists have found a special material called MoS2 that can be used in electronics, energy harvesting, and other cool things. But it's hard to make this material in big enough pieces for real use. The way the material grows can also cause problems with how well it works. However, some scientists figured out how to grow really good quality MoS2 in big pieces with the right shape and structure. They did tests to make sure it was good quality and found that it could even be used to collect energy from the sun! They also discovered a way to move the material easily so they can use it on different surfaces. This is important because it could help make more of this special material for lots of different uses. Definitions- Two-dimensional: Something that only has length and width, like a flat piece of paper. - Semiconductors: A type of material that can conduct electricity but not as well as metals. - Optoelectronics: Devices that use both light and electricity to work. - Energy harvesting: Collecting energy from sources like sunlight or heat. - Epitaxial growth mechanism: A way of growing crystals by adding new atoms onto an existing crystal surface in a specific direction.

Uniform Growth of High-Quality Centimeter-Scale Continuous Monolayer MoS2 with Control over Lattice Orientation

Two-dimensional semiconductors, such as molybdenum disulfide (MoS₂) have shown great potential for various applications in electronics, optoelectronics and energy harvesting. However, large-area growth methods are required to enable their practical use. In this study, the authors report on the uniform growth of high-quality centimeter-scale continuous monolayer MoS₂ with control over lattice orientation. The findings could pave the way for further research into large-scale production techniques for 2D materials with controlled crystallographic orientations which could have significant implications for future research in electronics, optoelectronics and energy harvesting fields using these materials.

Background: Challenges in Growing Large Areas of Two Dimensional Semiconductors

Significant progress has been made towards growing large areas of two dimensional semiconductors; however controlling the lattice orientation during growth remains a challenge. Grain boundaries can form during growth and negatively impact the electrical, optical and mechanical properties of MoS₂, as well as other 2D semiconductors.

Study Overview

In this study, transmission electron microscopy was used to show that a monolayer film is composed of coalescing single islands that share a predominant lattice orientation due to an epitaxial growth mechanism. Raman spectroscopy and photoluminescence spectra were used to confirm the high quality of the grown material while optical absorbance spectra acquired over large areas showed new features in the high-energy part of the spectrum indicating that MoS₂ could also be interesting for harvesting this region of solar spectrum and fabrication UV sensitive photodetectors. The interaction between substrate and MoS