# Double-dot charge transport in Si single electron/hole transistors

**Authors:** L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui  
**arXiv:** [cond-mat/0002080](https://arxiv.org/abs/cond-mat/0002080)  
**Date:** 2000-02-06  
**Summary page:** https://www.summarizepaper.com/fr/paper/cond-mat--0002080v1/

## Abstract

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.