# Double-dot charge transport in Si single electron/hole transistors

**Authors:** L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui  
**arXiv:** [cond-mat/0002080](https://arxiv.org/abs/cond-mat/0002080)  
**Date:** 2000-02-06  
**Summary page:** https://www.summarizepaper.com/en/paper/cond-mat--0002080v1/

## Key points

- Ultra-small Si quantum dot transistors were investigated
- Behavior of the devices varied depending on temperature range
- At high temperatures (4K-100K), single-electron or single-hole transport through lithographically defined dots was observed
- At temperatures below 4K, multidot transport was observed, indicating the presence of multiple dots involved in the process
- Samples with double-dot characteristics were analyzed to further understand this behavior
- Extra dots were found within the thermally grown gate oxide surrounding the lithographically defined dot
- This suggests that additional quantum dots can be created within the device structure itself
- The study provides valuable insights into Si quantum dot transistor transport properties
- Temperature effects and additional dots should be considered when understanding their behavior.

## Summary

The authors of this study investigated the transport properties of ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. The devices exhibited interesting behavior depending on the temperature range. At high temperatures (4K-100K), single-electron or single-hole transport through lithographically defined dots was observed. However, at temperatures below 4K, a different phenomenon was observed - multidot transport indicating the presence of multiple dots involved in the process. To further understand this behavior, samples with double-dot characteristics were analyzed. The researchers concluded that extra dots were formed within the thermally grown gate oxide surrounding the lithographically defined dot. This finding suggests that additional quantum dots can be created within the device structure itself, potentially leading to more complex electronic behavior. Overall, this study provides valuable insights into Si quantum dot transistor transport properties and highlights the importance of considering temperature effects and additional dots in understanding their behavior.