# Beyond Spin Coating: Homogeneous All-Inorganic Perovskite Films via High-Pressure Recrystallization

**Authors:** Trong Tam Nguyen, José Penuelas, Aziz Benamrouche, Céline Chevalier, Thi Kim Anh Hoang, Gaëlle Trippé-Allard, Elsa Cassette, Brice Devif, Emmanuel Drouard, Emmanuelle Deleporte, Hong Hanh Mai, Abdelaziz Bouazizi, Christian Seassal, Hai Son Nguyen  
**arXiv:** [2511.02177](https://arxiv.org/abs/2511.02177)  
**Date:** 2025-11-04  
**Summary page:** https://www.summarizepaper.com/en/paper/2511.02177v1/

## Key points

- Metal halide perovskites, particularly all-inorganic CsPbBr$_3$, are highly promising for optoelectronic applications
- High-pressure recrystallization is explored to enhance the quality of CsPbBr$_3$ thin films
- Recrystallization at 300 bar produces smooth, pinhole-free 3D perovskite layers with sub-nanometer roughness
- Film thickness can be controlled by adjusting precursor concentration
- High-pressure recrystallization process increases grain and crystallite sizes, leading to amplified spontaneous emission and improved photostability
- Temperature-dependent X-ray diffraction analysis reveals phase transition indicative of single-crystal behavior
- Study establishes a scalable and reproducible method for fabricating high-quality CsPbBr$_3$ films for optoelectronic devices

## Summary

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Metal halide perovskites, particularly all-inorganic CsPbBr$_3$, are highly promising materials for optoelectronic applications due to their exceptional optical and electronic properties. In this study by Trong Tam Nguyen et al., a novel approach using high-pressure recrystallization is explored to enhance the quality of CsPbBr$_3$ thin films. The researchers systematically investigate the morphological, structural, and optical properties of these films compared to standard non-recrystallized ones. By optimizing recrystallization at 300 bar, they successfully produce smooth, pinhole-free 3D perovskite layers with sub-nanometer roughness. Additionally, the film thickness can be precisely controlled by adjusting precursor concentration. The high-pressure recrystallization process leads to an increase in grain and crystallite sizes within the film, resulting in amplified spontaneous emission with a lower excitation threshold and improved photostability. Temperature-dependent X-ray diffraction analysis reveals a phase transition from orthorhombic to tetragonal to cubic phases, indicative of single-crystal behavior. This study not only provides valuable insights into pressure-driven recrystallization but also establishes a scalable and reproducible method for fabricating high-quality CsPbBr$_3$ films for use in optoelectronic devices. The research conducted by Trong Tam Nguyen and colleagues sheds light on a new avenue beyond traditional spin coating techniques for achieving homogeneous all-inorganic perovskite films with enhanced properties.