Defect recombination origin of low energy excess in semiconductor detectors

AI-generated keywords: excess signal semiconductor detectors atomistic simulations defect recombination cryogenic temperatures

AI-generated Key Points

  • Researchers investigate the phenomenon of an "excess" signal in semiconductor detectors at low energies
  • Excess signal attributed to long-term recombination events of complex defects formed by nuclear recoil radiation events
  • Recombination events exhibit exponential energy dependence and can trigger larger releases through avalanche effect
  • Five-stage simulation and analysis procedure used to explore disordered damage zones and energy release on extended time scales
  • Quantum thermal bath approach incorporated to evaluate quantum effects on annealing process
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Authors: Kai Nordlund, Fanhao Kong, Flyura Djurabekova, Matti Heikinheimo, Kimmo Tuominen, Nader Mirabolfathi

arXiv: 2408.07518v1 - DOI (cond-mat.mtrl-sci)
13 pages, 11 figures
License: CC BY-NC-SA 4.0

Abstract: When the detection threshold in semiconductor detectors is pushed to increasingly low energies, an ``excess" signal of apparent energy release events below a few hundred eV is observed in several different kinds of detectors, hindering their sensitivity for rare event signals in this energy range. Using atomistic simulations with classical thermostat and quantum thermal bath, we show that this kind of signal is consistent with energy release from long-term recombination events of complex defects that can be formed by any kind of nuclear recoil radiation events. The recombination events are shown to have a very similar exponential dependence of energy as that observed in experiments. By detailed analysis of recombination events, we show that crossing a low energy barrier ($\lesssim$ 0.1 eV) can trigger larger energy releases in an avalanche-like effect. This explains why large energy release events can occur even down to cryogenic temperatures.

Submitted to arXiv on 14 Aug. 2024

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Results of the summarizing process for the arXiv paper: 2408.07518v1

In this study, the researchers investigate the phenomenon of an "excess" signal observed in semiconductor detectors when the detection threshold is pushed to low energies. This , consisting of apparent energy release events below a few hundred eV, poses a challenge to the sensitivity of these for detecting rare event signals in this energy range. Through utilizing classical thermostat and quantum thermal bath approaches, the researchers demonstrate that this can be attributed to long-term recombination events of complex defects formed by nuclear recoil radiation events. The team's findings reveal that these recombination events exhibit an exponential dependence on energy similar to that observed in experiments. By conducting a detailed analysis of these recombination events, they uncover that crossing a low energy barrier (less than or equal to 0.1 eV) can trigger larger energy releases in an avalanche-like effect. This mechanism explains why large energy release events can occur even at . To further explore the production of disordered damage zones and potential energy release on extended time scales, the researchers employ a five-stage simulation and analysis procedure. This includes simulating radiation damage creation, thermal annealing of this damage over long periods, quenching configurations to 0 K to isolate potential energy release effects, extracting energy release data from recombination events, and analyzing the time scale of annealing. Additionally, considering quantum mechanical zero point vibrations at may influence atom dynamics, the team incorporates a quantum thermal bath (QTB) into their simulations to evaluate how quantum effects impact the annealing process. Overall, this comprehensive investigation sheds light on the underlying mechanisms behind the low-energy in and provides valuable insights into understanding complex defect recombination processes in these systems.
Created on 20 Aug. 2025

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