Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

AI-generated keywords: chiral spin texture Rashba spin-orbit coupling Dzyaloshinskii-Moriya interaction high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) topological Hall effect

AI-generated Key Points

  • Investigated the formation of chiral real space spin texture at the interface between Cd$_3$As$_2$ and In$_{1-x}$Mn$_x$As
  • Identified non-zero off-diagonal spin susceptibility in Cd$_3$As$_2$ layer due to Rashba spin-orbit coupling
  • Proposed existence of Dzyaloshinskii-Moriya interaction mediated by Dirac electrons for chiral spin texture formation
  • Utilized HAADF-STEM imaging and STEM EDX mapping for sample characterization during thinning processes
  • Conducted electrical magnetoresistance measurements on Hall bar devices to observe emergent behavior at low temperatures, revealing a topological Hall effect
  • Data availability upon request from corresponding author or through Penn State's ScholarSphere repository
  • Code availability for calculations and computational work with relevant packages accessible online or through direct inquiry
  • Acknowledged funding sources including NSF grants, startup funds from University of North Texas, computational resources from Texas Advanced Computing Center and Oak Ridge National Laboratory, support from Institute for Quantum Matter and Characterization Facility at University of Minnesota
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Authors: Saurav Islam, Emma Steinebronn, Kaijie Yang, Bimal Neupane, Juan Chamorro, Supriya Ghosh, K. Andre Mkhoyan, Tyrel M. McQueen, Yuanxi Wang, Chaoxing Liu, Nitin Samarth

arXiv: 2403.18485v1 - DOI (cond-mat.mes-hall)
License: CC BY 4.0

Abstract: We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet.

Submitted to arXiv on 27 Mar. 2024

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Results of the summarizing process for the arXiv paper: 2403.18485v1

In this study, a concerted theory-experiment effort was employed to investigate the formation of chiral real space spin texture at the interface between the Dirac semimetal Cd$_3$As$_2$ and the ferromagnetic semiconductor In$_{1-x}$Mn$_x$As with perpendicular magnetic anisotropy. The research revealed a non-zero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer, attributed to Rashba spin-orbit coupling resulting from broken inversion symmetry. This finding suggests the existence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the adjacent Cd$_3$As$_2$ layer, potentially leading to the formation of a real space chiral spin texture. Experimental techniques such as high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and STEM energy dispersive X-ray (EDX) mapping were utilized to characterize the film surface and ensure sample integrity during thinning processes. Electrical magnetoresistance measurements conducted on Hall bar devices provided further insights into the emergent behavior observed at low temperatures. Specifically, an excess contribution to transverse magneto-resistance consistent with a topological Hall effect was identified, indicating the presence of an interfacial chiral spin texture. The study also emphasized that all data associated with results presented in both main manuscript and supplementary materials are available upon request to the corresponding author or through Penn State's ScholarSphere repository. Additionally, code availability for calculations and computational work was highlighted, with relevant packages accessible online or through direct inquiry. Acknowledgments were extended to various funding sources supporting different aspects of the project, including NSF grants, startup funds from institutions like University of North Texas, computational resources from Texas Advanced Computing Center and Oak Ridge National Laboratory, as well as support from organizations such as Institute for Quantum Matter and Characterization Facility at University of Minnesota. Individual researchers were acknowledged for their specific contributions within this collaborative effort.
Created on 01 Apr. 2024

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