Results of the summarizing process for the arXiv paper: 1709.01364v1

In the field of graphene spintronics, integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is a crucial task. A group of researchers including Marc Drögeler, Luca Banszerus, Frank Volmer, Takashi Taniguchi, Kenji Watanabe, Bernd Beschoten, and Christoph Stampfer have developed a novel approach using a van der Waals pickup technique to transfer CVD graphene by hexagonal boron nitride (hBN) onto predefined Co/MgO electrodes for building inverted spin valve devices. Two distinct methods were employed in this study: the first involved patterning the CVD-graphene/hBN stack into a bar shape before transferring it onto spin valve electrodes using a larger hBN crystal; the second method entailed directly transferring the CVD-graphene/hBN stack. The researchers reported record-high spin lifetimes in CVD graphene reaching up to 1.75 nanoseconds at room temperature. Remarkably, the performance of these devices was found to be comparable to those fabricated from exfoliated graphene, demonstrating nanosecond spin lifetimes. The success of these dry transfer methods not only holds promise for advancements in spintronic applications but also opens up possibilities for developing more sophisticated device geometries. This innovative approach may prove instrumental in creating CVD-graphene-based nanoelectronic devices that require precise patterning prior to assembling final van der Waals heterostructures. The findings of this study were published in Applied Physics Letters under DOI 10.1063/1.5000545 and provide valuable insights for future research in the field of graphene-based spintronics and nanoelectronics.

• - Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is crucial in graphene spintronics.
• - Researchers developed a novel approach using a van der Waals pickup technique to transfer CVD graphene by hexagonal boron nitride (hBN) onto predefined Co/MgO electrodes for building inverted spin valve devices.
• - Two distinct methods were employed: patterning the CVD-graphene/hBN stack into a bar shape before transferring it onto spin valve electrodes and directly transferring the CVD-graphene/hBN stack.
• - Record-high spin lifetimes in CVD graphene reaching up to 1.75 nanoseconds at room temperature were reported, comparable to those fabricated from exfoliated graphene.
• - The success of these dry transfer methods holds promise for advancements in spintronic applications and opens up possibilities for developing more sophisticated device geometries.
• - This innovative approach may prove instrumental in creating CVD-graphene-based nanoelectronic devices that require precise patterning prior to assembling final van der Waals heterostructures.
• - The findings of this study were published in Applied Physics Letters under DOI 10.1063/1.5000545 and provide valuable insights for future research in the field of graphene-based spintronics and nanoelectronics.

Summary1. Using high-quality graphene made through a special process is very important for making advanced electronic devices. 2. Scientists found a new way to move this special graphene onto specific parts of the device using a unique technique. 3. They tried two different ways: cutting the graphene into a shape first or moving it as it is. 4. The graphene they used had really good properties, lasting up to 1.75 nanoseconds at room temperature. 5. These new methods are exciting because they can help make better electronic devices in the future. Definitions- Graphene: A thin layer of carbon atoms arranged in a hexagonal pattern, known for its strength and conductivity. - Chemical vapor deposition (CVD): A method to grow high-quality materials by letting gases react on a surface. - Spintronics: Technology that uses electron spin to store and process information in electronic devices. - Van der Waals forces: Weak attractions between molecules or atoms that hold them close together. - Heterostructures: Materials made by stacking different layers with varying properties on top of each other. - DOI (Digital Object Identifier): A unique code assigned to scientific publications for easy identification and access.

Graphene, a two-dimensional material made of a single layer of carbon atoms arranged in a honeycomb lattice, has attracted significant attention in recent years due to its unique properties. One such property is its high mobility, making it an ideal candidate for use in spintronics – a field that aims to utilize the spin of electrons for information processing and storage. However, one major challenge in utilizing graphene for spintronic applications is the need to integrate it with other materials while maintaining its high mobility. This is where the research paper by Drögeler et al. comes into play. In their study published in Applied Physics Letters, they present an innovative approach using van der Waals pickup technique to transfer chemical vapor deposition (CVD) grown graphene onto predefined electrodes for building inverted spin valve devices. The team of researchers from RWTH Aachen University and University of Regensburg included Marc Drögeler, Luca Banszerus, Frank Volmer, Takashi Taniguchi, Kenji Watanabe, Bernd Beschoten and Christoph Stampfer. They employed two distinct methods in their study – the first involved patterning the CVD-graphene/hBN stack into a bar shape before transferring it onto spin valve electrodes using a larger hBN crystal; while the second method directly transferred the CVD-graphene/hBN stack. The results were impressive as they reported record-high spin lifetimes reaching up to 1.75 nanoseconds at room temperature – comparable to those fabricated from exfoliated graphene which has been considered as the gold standard for high-mobility graphene devices. These findings demonstrate that CVD-grown graphene can also exhibit long spin lifetimes and hold great potential for use in future spintronic applications. One key advantage of this approach is that it allows precise patterning of graphene prior to assembling final van der Waals heterostructures – something that was not possible with previous techniques such as wet transfer methods. This opens up possibilities for developing more sophisticated device geometries and could lead to further advancements in the field of graphene-based spintronics. Moreover, the success of these dry transfer methods not only holds promise for spintronic applications but also has implications for other areas such as nanoelectronics. The ability to transfer CVD-grown graphene onto predefined electrodes using van der Waals pickup technique could prove instrumental in creating complex nanoelectronic devices that require precise patterning. In conclusion, the research paper by Drögeler et al. presents a novel approach for integrating high-mobility CVD-grown graphene into spin transport devices using van der Waals pickup technique. Their findings demonstrate the potential of this method in achieving long spin lifetimes and open up possibilities for more advanced device designs. This study provides valuable insights for future research in the field of graphene-based spintronics and nanoelectronics, paving the way towards realizing efficient and high-performance electronic devices.